The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Nov. 19, 2018
Applicant:

Powerchip Technology Corporation, Hsinchu, TW;

Inventors:

Chih-Ping Chung, Hsinchu, TW;

Ming-Yu Ho, Taichung, TW;

Wen-Hao Huang, Hsinchu, TW;

Saysamone Pittikoun, Hsinchu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/359 (2011.01); H04N 5/355 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14609 (2013.01); H01L 27/14623 (2013.01); H01L 27/14641 (2013.01); H04N 5/359 (2013.01); H04N 5/3559 (2013.01); H04N 5/37452 (2013.01);
Abstract

An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.


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