The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 09, 2016
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Masaaki Bairo, Kanagawa, JP;
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14605 (2013.01); H01L 29/4238 (2013.01); H01L 29/78 (2013.01); H01L 27/1463 (2013.01); H01L 29/42368 (2013.01); H04N 5/3745 (2013.01);
Abstract
A MOS field-effect transistor according to the present disclosure includes: an element isolation region that defines an active region; a source region and a drain region formed in the active region; a gate insulating film provided on a channel region between the source region and the drain region; and a gate electrode provided on the gate insulating film, in which the gate electrode has an electrode shape in which a potential at a border between the element isolation region and the active region becomes shallower than a potential at a channel center part.