The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Dec. 14, 2018
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Sung-Lae Oh, Chungcheongbuk-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/11582 (2017.01); H01L 27/11548 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11548 (2013.01); H01L 27/11556 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01);
Abstract

A semiconductor memory device includes a substrate defined with a first cell region, a slimming region extending from the first cell region in a first direction and a second cell region extending from the slimming region in the first direction; first and second electrode structures each including electrodes which are stacked on the substrate, and disposed to be separated from each other in a second direction crossing with the first direction, with a slit interposed therebetween; and a plurality of step-shaped holes disposed in the slimming region along the first direction, and respectively formed in the first and second electrode structures. Each of the step-shaped holes includes first step structures which face each other in the first direction, are symmetrical to each other and are separated by the slit and second step structures which face each other in the second direction and are symmetrical to each other.


Find Patent Forward Citations

Oh, Sung-Lae. (2020). Semiconductor memory device and method for forming the same (U.S. Patent No. 10629614). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10629614

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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