The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Apr. 30, 2015
Mitsubishi Electric Corporation, Tokyo, JP;
Shinji Sakai, Tokyo, JP;
Hisashi Oda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The present technique relates to a protection circuit for a MOSFET and a protection circuit system including the protection circuit all of which can reduce losses in the main current and increase in the manufacturing costs for ensuring a sense area. The protection circuit includes: a first MOSFET for power through which a main current flows; an IGBT which is connected in parallel to the first MOSFET and through which a current diverted from the main current flows; a sense resistor connected in series with the IGBT; and a first control circuit that controls a gate voltage of the first MOSFET based on a value of a voltage to be applied to the sense resistor, wherein a ratio of the diverted current flowing through the IGBT to the main current flowing through the first MOSFET in current value ranges from 0.018% to 0.022%.