The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Nov. 16, 2018
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Jie Zeng, Singapore, SG;
GLOBALFOUNDRIES SINGAPORE PTE. LTD., Singapore, SG;
Abstract
Integrated circuits including an electrostatic discharge device and methods of forming the integrated circuits are provided herein. In an embodiment, an integrated circuit includes an n-type epitaxy layer, a segmented p-well, a p-type buried layer, and a collector region. The segmented p-well is formed in the n-type epitaxy layer. The segmented p-well defines and laterally surrounds a spacing region of the n-type epitaxy layer. The p-type buried layer is formed in the spacing region. The p-type buried layer laterally extends into the segmented p-well about the spacing region and impedes current flow between an underlying portion of the n-type epitaxy layer in relation to the p-type buried layer and an overlying portion of the n-type epitaxy layer in the spacing region. The collector region of the electrostatic discharge device is formed in the overlying portion of the n-type epitaxy layer in the spacing region.