logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10629583 B1

PDFFull Text
Date of Patent:
Apr. 21, 2020

Filed:

Nov. 02, 2018

Transient voltage suppression device

Applicant:

Upi Semiconductor Corp., Hsinchu County, TW;

Inventors:

Yu-Hsuan Liu, Hsinchu County, TW;

Chih-Hao Chen, Hsinchu County, TW;

Assignee:

uPI Semiconductor Corp., Hsinchu County, TW;

Attorney:

JCIPRNET

Primary Examiner:

David Vu

Assistant Examiner:

Brandon C Fox

Int. Cl.
CPC ...
H01L 29/866 (2006.01); H01L 27/02 (2006.01); H01L 23/58 (2006.01); H01L 27/08 (2006.01); H01L 23/60 (2006.01); H01L 29/861 (2006.01); H01L 23/62 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0248 (2013.01); H01L 23/585 (2013.01); H01L 23/60 (2013.01); H01L 23/62 (2013.01); H01L 27/0814 (2013.01); H01L 29/866 (2013.01); H01L 29/8611 (2013.01); H01L 23/528 (2013.01);
Abstract

A transient voltage suppression device including a substrate and a first transient voltage suppressor is provided. The substrate includes a device region and a seal-ring region. The seal-ring region surrounds the device region. A first transient voltage suppressor is located in the device region. The first transient voltage suppressor includes a first well region having a first conductivity type, a first doped region having a second conductivity type, and a second doped region having the second conductivity type. The first well region is located in the substrate of the device region. The first doped region is located in the first well region. The second doped region is located in the first well region. A third doped region having the second conductivity type is located in the substrate of the seal-ring region, and the third doped region is electrically connected to the first doped region.

Find Patent Forward Citations

Liu, Yu-Hsuan. (2020). Transient voltage suppression device (U.S. Patent No. 10629583). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10629583

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…