The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Mar. 26, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Lakgyo Jeong, Ansan-si, KR;

Seolun Yang, Hwaseong-si, KR;

Yongrae Cho, Anyang-si, KR;

Hee Bum Hong, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 27/02 (2006.01); H01L 27/11 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 21/8238 (2006.01); H01L 21/027 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 21/0274 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/823871 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 21/823807 (2013.01); H01L 23/5286 (2013.01); H01L 27/092 (2013.01);
Abstract

A semiconductor device includes a substrate including a first region and a second region, memory transistors on the first region, a first interconnection layer on the memory transistors and including first interconnection lines, and a second interconnection layer on the first interconnection layer and including second interconnection lines. The second interconnection lines on the first region include a first line extending along a first direction and spaced from the second region by a first distance along the first direction, and a second line extending along the first direction, spaced from the first line along a second direction intersecting the first direction, and having a width smaller than that of the first line. The first line includes a protrusion extending along a third direction toward the substrate. The protrusion is spaced from the second region by a second distance along the first direction greater than the first distance.


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