The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Sep. 05, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hui Zang, Guilderland, NY (US);
Josef S. Watts, Stillwater, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 23/528 (2006.01); H01L 27/12 (2006.01); H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H01L 23/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76805 (2013.01); H01L 21/76819 (2013.01); H01L 21/76834 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/845 (2013.01); H01L 23/535 (2013.01); H01L 23/66 (2013.01); H01L 27/1211 (2013.01); H01L 29/0653 (2013.01); H01L 29/41791 (2013.01); H01L 29/785 (2013.01); H01L 21/76883 (2013.01);
Abstract
One aspect of the disclosure relates to an integrated circuit structure. The integrated circuit structure may include: a gate stack having a gate conductor therein over a substrate, the gate stack being within a dielectric layer; a source/drain contact to a source/drain region over the substrate and adjacent to the gate stack within the dielectric layer; an upper conductor extending above, without contacting, the source/drain contact, wherein the upper conductor extends within the dielectric layer to contact the gate conductor within the gate stack.