The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Sep. 26, 2018
Tes Co., Ltd, Gyeonggi-do, KR;
Tae-Yong Sim, Gyeonggi-do, KR;
Jong-Bae Lee, Gyeonggi-do, KR;
TES CO., LTD, Yongin, Gyeonggi-do, KR;
Abstract
The present invention relates to a method for selectively etching a silicon oxide film in a semiconductor manufacturing process and comprises: a step of introducing a substrate having a silicon nitride film and a silicon oxide film to a substrate support part inside a reactor; a step of heating the substrate introduced into the reactor, so as to maintain a first temperature; a first step of supplying halogen gas and basic gas to the inside of the reactor, while the first temperature is maintained, so as to be reacted with the silicon oxide film formed on the substrate, thereby forming a reaction product on the substrate; a second step of heating the substrate, having the reaction product, up to a second temperature so as to remove the reaction product; a third step of cooling the temperature of the substrate down to the first temperature; and a step of repetitively performing the first step to the third step a preset number of times.