The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2020
Filed:
Aug. 02, 2011
Applicants:
Anand Seshadri, Richardson, TX (US);
Theodore W. Houston, Richardson, TX (US);
Inventors:
Anand Seshadri, Richardson, TX (US);
Theodore W. Houston, Richardson, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/413 (2006.01);
U.S. Cl.
CPC ...
G11C 11/00 (2013.01); G11C 11/413 (2013.01);
Abstract
An integrated circuit containing SRAM cells. Each SRAM cell has a PMOS driver transistor, a PMOS passgate transistor, and at least two separate n-wells. The integrated circuit also has an n-well bias control circuit that is configured to independently bias the n-wells of an addressed SRAM cell. Moreover, a process of operating an integrated circuit that contains SRAM cells. The process includes writing a low data bit value, writing a high data bit value, and reading a data bit value of an addressed SRAM cell.