The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

Oct. 10, 2018
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Joel Hatsch, Holzkirchen, DE;

Bernd Meyer, Munich, DE;

Jan Otterstedt, Unterhaching, DE;

Steffen Sonnekalb, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 13/28 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 7/24 (2006.01); G11C 7/10 (2006.01); G11C 8/08 (2006.01); G06F 16/23 (2019.01);
U.S. Cl.
CPC ...
G06F 3/0659 (2013.01); G06F 3/0604 (2013.01); G06F 3/0673 (2013.01); G06F 11/1004 (2013.01); G06F 11/1076 (2013.01); G11C 7/1006 (2013.01); G11C 7/24 (2013.01); G11C 8/08 (2013.01); G06F 3/0614 (2013.01); G06F 3/0619 (2013.01); G06F 16/2365 (2019.01);
Abstract

A memory arrangement having a memory cell field with columns and rows of writable memory cells, a memory controller which is configured to initiate an access to a first group of memory cells of a row of memory cells and, together with the access to the first group of memory cells, to initiate a read access to a second group of memory cells of the row of memory cells, and a verification circuit which is configured to check whether the access to the first group of memory cells has been performed on the correct row of memory cells on the basis of whether values read during the read access to the second group of memory cells match values previously stored by the second group of memory cells.


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