The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2020

Filed:

May. 08, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Nuo Xu, Milpitas, CA (US);

Jing Wang, San Jose, CA (US);

Woosung Choi, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/317 (2006.01); G01R 31/3193 (2006.01); G01R 31/28 (2006.01); G01R 31/3177 (2006.01); G01R 31/34 (2020.01);
U.S. Cl.
CPC ...
G01R 31/31718 (2013.01); G01R 31/2894 (2013.01); G01R 31/3177 (2013.01); G01R 31/31937 (2013.01);
Abstract

In a method of circuit yield analysis, the method includes: detecting a plurality of failed samples respectively located at a plurality of failure regions in a multi-dimensional parametric space; clustering the failed samples to identify the failure regions; filtering features of the failed samples to determine a parameter component that is a non-principal component in affecting circuit yield; applying a dimensional reduction method on a dimension corresponding to the parameter component; and constructing a final importance sampling (IS) distribution function using a mixed Gaussian (mGaussian) function corresponding to all of the failure regions containing a rare failure event.


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