The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jan. 28, 2019
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventor:

Takahiro Mori, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/12 (2006.01); H03K 17/14 (2006.01); H03K 17/16 (2006.01); H03K 17/687 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H03K 17/145 (2013.01); H01L 27/088 (2013.01); H03K 17/161 (2013.01);
Abstract

A driving circuit that drives an insulated-gate semiconductor device. The driving circuit includes a constant-current generation circuit and a discharge circuit. The constant-current generation circuit has first and second transistors forming a current mirror, and a constant-current circuit connected to the drain of the first transistor for providing a constant current to the current mirror. The discharge circuit is connected to a gate of the insulated-gate semiconductor device and the drain of the second transistor, and includes a third transistor. The discharge circuit is configured to draw out a current injected into the gate of the insulated-gate semiconductor device by inputting a driving signal to the gate of the third transistor, and correct a metal-oxide-semiconductor (MOS) size of the third transistor so as to adjust an amount of a current that flows via the drain and the source of the third transistor to ground.


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