The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Aug. 23, 2017
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Sungnim Jo, Seoul, KR;

Kyueun Shim, Daejeon, KR;

Sewon Kim, Suwon-si, KR;

Jongseok Moon, Suwon-si, KR;

Kanghee Lee, Suwon-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/583 (2010.01); H01M 4/133 (2010.01); H01M 4/36 (2006.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 4/134 (2010.01); H01M 4/587 (2010.01); H01M 4/04 (2006.01); H01M 4/62 (2006.01); H01M 4/38 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01); H01M 10/052 (2010.01); C01B 32/182 (2017.01); C01B 32/158 (2017.01); C01B 32/20 (2017.01); H01M 4/66 (2006.01);
U.S. Cl.
CPC ...
H01M 4/583 (2013.01); H01M 4/0471 (2013.01); H01M 4/133 (2013.01); H01M 4/134 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/364 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/587 (2013.01); H01M 4/62 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); C01B 32/158 (2017.08); C01B 32/182 (2017.08); C01B 32/20 (2017.08); H01M 4/66 (2013.01); H01M 10/052 (2013.01); H01M 2004/027 (2013.01);
Abstract

A negative active material including: a porous silicon-carbon secondary particle including: a plurality of silicon-carbon primary particles including a plurality of silicon-carbon primary particles including a silicon material, and a first carbonaceous material, wherein an apparent density of a silicon-carbon primary particle of the plurality of silicon-carbon primary particles is about 2 grams per cubic centimeter or greater; and a second carbonaceous material, wherein the second carbonaceous material is disposed on the plurality of silicon-carbon primary particles.


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