The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Sep. 19, 2017
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;

Inventors:

Inhyuk Son, Yongin-si, KR;

Jumyeung Lee, Suwon-si, KR;

Seongyong Park, Hanam-si, KR;

Jungho Lee, Yongin-si, KR;

Sungsoo Han, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/36 (2006.01); H01M 4/587 (2010.01); H01M 4/38 (2006.01); H01M 10/04 (2006.01); H01L 35/22 (2006.01); H01L 35/32 (2006.01); H01M 4/48 (2010.01); H01M 4/62 (2006.01); H01M 4/485 (2010.01); H01M 4/131 (2010.01); H01M 4/133 (2010.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01L 35/22 (2013.01); H01L 35/32 (2013.01); H01M 4/131 (2013.01); H01M 4/133 (2013.01); H01M 4/364 (2013.01); H01M 4/386 (2013.01); H01M 4/483 (2013.01); H01M 4/485 (2013.01); H01M 4/587 (2013.01); H01M 4/625 (2013.01); H01M 10/0427 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract

A porous silicon composite cluster comprising: a porous core comprising a porous silicon composite secondary particle, wherein the silicon composite secondary particle comprises an aggregate of two or more silicon composite primary particles, and the silicon composite primary particles each comprise silicon, a silicon oxide of the Formula SiO, wherein 0<x<2, disposed on the silicon, and a first graphene disposed on the silicon oxide; and a shell disposed on and surrounding the core, the shell comprising a second graphene.


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