The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jun. 30, 2016
Applicant:

Seoul National University R&db Foundation, Seoul, KR;

Inventors:

Cheol Seong Hwang, Seoul, KR;

Jung Ho Yoon, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/1616 (2013.01); H01L 45/1625 (2013.01);
Abstract

Provided are a semiconductor technique, and more particularly, to a variable resistor, a non-volatile memory device using the same, and a method of fabricating the same. The variable resistor may include a first electrode including titanium (Ti); a second electrode for forming a Schottky barrier; and a stacked structure including an oxygen-deficient hafnium oxide film (HfO, 0<x<2) between the first electrode and the second electrode, an oxygen-deficient titanium oxide (TiO) film between the oxygen-deficient hafnium oxide film and the first electrode, and a stoichiometric tantalum oxide (TaO) film between the oxygen-deficient hafnium oxide film and the second electrode.


Find Patent Forward Citations

Loading…