The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Jul. 06, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Sung Chul Lee, Osan-si, KR;

Se Chung Oh, Yongin-si, KR;

Sangjun Yun, Hwaseong-si, KR;

Jae Hoon Kim, Seoul, KR;

KyungTae Nam, Suwon-si, KR;

Eunsun Noh, Yongin-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.


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