The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Sep. 21, 2017
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Shuhichiroh Yamamoto, Sakai, JP;
Yoshihiro Ueta, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Abstract
A vertically structured, aluminum nitride-based semiconductor deep ultraviolet light-emitting device is provided that exhibits a high light emission efficiency and an improved yield. The aluminum nitride-based semiconductor deep ultraviolet light-emitting device includes: a conductive support substrate; a porous metal film having a conductive macroporous structure with a pore rate of from 10% to 50% inclusive; and an aluminum nitride-based semiconductor layer structural body with a light-emitting layer, the conductive support substrate and the aluminum nitride-based semiconductor layer structural body being bonded with the porous metal film interposed therebetween for electrical connection, wherein the aluminum nitride-based semiconductor deep ultraviolet light-emitting device has an emission peak wavelength of from 220 nm to 300 nm inclusive.