The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Sep. 27, 2018
Applicant:
Xiamen Sanan Optoelectronics Technology Co., Ltd., Xiamen, CN;
Inventors:
Assignee:
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen, CN;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01); H01L 33/20 (2010.01); H01L 33/12 (2010.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01);
Abstract
A nitride underlayer includes: a pattern substrate with lattice planes of different growth rates; a nitride nucleating layer over the pattern substrate; a first nitride layer with three-dimensional growth over the nitride nucleating layer, and forming a nanopillar structure at a top of the substrate; a second nitride layer with two-dimensional growth over the first nitride layer, and folding into an uncracked plane over the nanopillar structure.