The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
May. 10, 2018
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Junji Kotani, Atsugi, JP;
Norikazu Nakamura, Sagamihara, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A compound semiconductor device includes an electron transit layer, a spacer layer disposed on the electron transit layer, and an electron supply layer disposed on the spacer layer and containing a donor impurity. The electron supply layer has a concentration distribution of the donor impurity where the donor impurity is at a first concentration at an interface between the electron supply layer and the spacer layer and at a second concentration lower than the first concentration at an upper surface of the electron supply layer, and a concentration of the donor impurity at one of arbitrarily-selected two positions closer to the upper surface in a thickness direction of the electron supply layer is less than the concentration of the donor impurity at another one of the two positions closer to the interface in the thickness direction.