The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jun. 14, 2018
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Mo Chen, Beijing, CN;
Li-Hui Zhang, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method of making thin film transistor including: forming a gate electrode, forming a gate insulating layer on the gate electrode; locating a semiconductor layer on the gate insulating layer; placing stripe-shaped masks on the semiconductor layer, wherein the thickness of the stripe-shaped masks is H, the spacing distance between the stripe-shaped masks is L; depositing a first conductive film layer along a first direction, the thickness of the first conductive film layer is D, a first angle between the first direction and a direction along the thickness of the stripe-shaped masks is θ, θ<tan(L/H); depositing a second conductive film layer along a second direction, a second angle between the second direction and the direction along the thickness of the stripe-shaped masks is θ, θ<tan[L/(H+D)], 0<Htanθ+(H+D)tanθ−L<10 nm, the first conductive film layer forms a source electrode, the second conductive film layer forms a drain electrode.