The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Aug. 22, 2018
Applicant:
Hunteck Semiconductor (Shanghai) Co., Ltd., Shanghai, CN;
Inventor:
Jun Hu, San Bruno, CA (US);
Assignee:
HUNTECK SEMICONDUCTOR (SHANGHAI) CO. Ltd., Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0878 (2013.01); H01L 29/0607 (2013.01); H01L 29/0611 (2013.01); H01L 29/0615 (2013.01); H01L 29/1045 (2013.01); H01L 29/407 (2013.01); H01L 29/66477 (2013.01); H01L 29/66666 (2013.01); H01L 29/66712 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01);
Abstract
This invention discloses a metal oxide semiconductor field effect transistor (MOSFET) device. The MOSFET device has a semiconductor substrate that supports an epitaxial layer thereon. The epitaxial layer comprises at least three layers of different dopant concentrations and wherein a middle epitaxial layer having a varying dopant concentration profile along an upward vertical direction.