The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jul. 11, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Hai Zhao, Shanghai, CN;
Abstract
The present disclosure relates to the field of semiconductor technologies, and discloses semiconductor apparatus and manufacturing methods for the same. In some implementations, a method may include: providing a substrate structure which includes: a substrate, one or more fins located on the substrate and extending along a first direction, and an isolation region located around one of the fins, an upper surface of the isolation region being lower than an upper surface of the fin, the isolation region including a first isolation region and a second isolation region, where the first isolation region is located on a side surface of the fin that is in the first direction, and the second isolation region is located on a side surface of the fin that is in a second direction that is different from the first direction; forming, on the substrate structure, a sacrificial layer having an opening, the opening exposing an upper surface of the first isolation region and exposing a part, which is located above the first isolation region, of the side surfaces of the fin adjacent to the first isolation region; filling the opening with an insulating material to form a third isolation region on the first isolation region, an upper surface of the third isolation region being higher than the upper surface of the fin; and removing the sacrificial layer.