The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Apr. 17, 2019
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jonghyuk Park, Hwaseong-si, KR;
Byoungho Kwon, Hwaseong-si, KR;
Inho Kim, Ansan-si, KR;
Hyesung Park, Anyang-si, KR;
Jin-Woo Bae, Yongin-si, KR;
Yanghee Lee, Incheon, KR;
Inseak Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes providing a substrate including a pair of first regions and a second region therebetween, forming first patterns on the respective first regions to at least partially define a stepwise portion at the second region, and forming a dummy pattern that at least partially fills the stepwise portion. The dummy pattern may be an electrically floating structure. The dummy pattern may be formed as part of forming second patterns on the respective first regions, and the dummy pattern and the second patterns may include substantially common materials. Because the dummy pattern at least partially fills the stepwise portion at the second region, the material layer covering the second patterns and the dummy pattern may omit a corresponding stepwise portion.