The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Feb. 28, 2018
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventor:
Hanae Ishihara, Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/11582 (2017.01); H01L 27/11575 (2017.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/11582 (2013.01);
Abstract
A storage device includes a first wiring layer, a second wiring layer spaced from the first wiring layer in a first direction, and a plurality of electrode layers stacked in the first direction between the first wiring layer and the second wiring layer. A semiconductor pillar penetrates the plurality of electrode layers in the first direction. The plurality of electrode layers includes a first electrode layer connected to a first wire in the first wiring layer and a second electrode layer connected to a second wire in the second wiring layer.