The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jun. 24, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/288 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/2885 (2013.01); H01L 21/7682 (2013.01); H01L 21/76834 (2013.01); H01L 21/76841 (2013.01); H01L 21/76898 (2013.01); H01L 23/528 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01); H01L 29/4175 (2013.01); H01L 29/7816 (2013.01); H01L 29/7835 (2013.01); H01L 21/76846 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 29/063 (2013.01); H01L 29/0696 (2013.01); H01L 29/1045 (2013.01); H01L 29/404 (2013.01);
Abstract
In an embodiment, a semiconductor device includes a semiconductor substrate, a LDMOS transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a conductive plug filling a first portion of the via and a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug.