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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10622213 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Jun. 15, 2017

Method of manufacturing semiconductor device

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventor:

Yukinao Kaga, Toyama, JP;

Assignee:

KOKUSAI ELECTRIC CORPORATION, Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Duy Vu N Deo

Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 21/31 (2006.01); C23C 16/455 (2006.01); H01L 21/3205 (2006.01); C23C 16/458 (2006.01); H01L 21/3065 (2006.01); H01L 21/673 (2006.01);
U.S. Cl.
CPC ...
H01L 21/285 (2013.01); C23C 16/4584 (2013.01); C23C 16/45527 (2013.01); C23C 16/45546 (2013.01); C23C 16/45563 (2013.01); C23C 16/45578 (2013.01); H01L 21/28562 (2013.01); H01L 21/3065 (2013.01); H01L 21/31 (2013.01); H01L 21/32051 (2013.01); H01L 21/67383 (2013.01);
Abstract

A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.

Find Patent Forward Citations

Kaga, Yukinao. (2020). Method of manufacturing semiconductor device (U.S. Patent No. 10622213). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10622213

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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