The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Oct. 05, 2016
Applicants:

Centre National DE LA Recherche Scientifique, Paris, FR;

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Inventors:

Gilles Gaudin, Le Sapey en Chartreuse, FR;

Ioan Mihai Miron, Grenoble, FR;

Olivier Boulle, Grenoble, FR;

Safeer Chenattukuzhiyil, Kerala, IN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/09 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract

The invention relates to a magnetic memory cell (), comprising: a stack () including a magnetic layer section () between a conductive layer section () and a section () of a layer that is different from the conductive layer, the magnetic layer having a magnetisation () perpendicular to the plane of the layers; a metallisation section () on which the stack is placed; and first, second, third and fourth metallisation arms (D toG), each arm having a median axis (D toG), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (E,G), and mostly on its right for the third and fourth arms (D,F).


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