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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10620537 B1

PDFFull Text
Date of Patent:
Apr. 14, 2020

Filed:

Jun. 13, 2017

Resist underlayer film composition, patterning process, method for forming resist underlayer film, and compound for resist underlayer film composition

Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Takeru Watanabe, Jyoetsu, JP;

Rie Kikuchi, Jyoetsu, JP;

Daisuke Kori, Jyoetsu, JP;

Yusuke Biyajima, Jyoetsu, JP;

Tsutomu Ogihara, Jyoetsu, JP;

Assignee:

SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Cynthia Hamilton

Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/09 (2006.01); G03F 7/038 (2006.01); G03F 7/027 (2006.01); G03F 7/075 (2006.01); G03F 7/025 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0392 (2013.01); G03F 7/025 (2013.01); G03F 7/027 (2013.01); G03F 7/038 (2013.01); G03F 7/0397 (2013.01); G03F 7/0752 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); G03F 7/202 (2013.01); H01L 21/0332 (2013.01); H01L 21/311 (2013.01); H01L 21/31144 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01);
Abstract

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,WX)  (1)W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). 'n' represents an integer of 1 to 10, The dotted line represents a bonding arm. Rrepresents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

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