The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2020

Filed:

Dec. 27, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae-hoon Kim, Seoul, KR;

Sang-hwan Park, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G11C 29/50 (2006.01); H01L 21/66 (2006.01); G11C 29/06 (2006.01); G11C 29/04 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G11C 29/06 (2013.01); G11C 29/50004 (2013.01); H01L 22/14 (2013.01); G11C 2029/0403 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A method of testing a semiconductor device includes respectively applying first to n-th voltages that change according to time to first to n-th semiconductor devices that are substantially same until the first to n-th semiconductor devices break down; calculating first to n-th stresses that define the total amount of stress respectively applied to the first to n-th semiconductor devices until a time when the first to n-th semiconductor devices break down, respectively, after the first to n-th voltages are applied; and calculating lifespan of the first to n-th semiconductor devices by using the first to n-th stresses.


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