The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Aug. 24, 2017
Nissha Co., Ltd., Kyoto-shi, Kyoto, JP;
Hideaki Nada, Kyoto, JP;
Jumpei Morita, Kyoto, JP;
NISSHA CO., LTD., Kyoto-Shi, Kyoto, JP;
Abstract
A pressure sensor is disclosed. The pressure sensor includes a common electrode, a plurality of individual electrodes, a plurality of thin-film transistors and a common pressure-sensitive layer. The common electrode is formed as a layer. The plurality of individual electrodes are arranged in a matrix opposing the common electrode. The plurality of thin-film transistors are respectively located corresponding to the individual electrodes on sides of the individual electrodes opposite to the common electrode, where one or two or more adjacent thin-film transistors are connected to one individual electrode. The common pressure-sensitive layer is disposed on a surface of the common electrode on a side facing the plurality of individual electrodes. The plurality of individual electrodes include a first electrode, and a second electrode that is thicker than the first electrode and therefore creates a smaller gap from the common pressure-sensitive layer than the first electrode.