The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jul. 14, 2016
Applicant:
Fujifilm Electronic Materials U.s.a., Inc., N. Kingstown, RI (US);
Inventors:
Assignee:
Fujifilm Electronic Materials U.S.A., Inc., N. Kingstown, RI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/32 (2006.01); C11D 11/00 (2006.01); C11D 7/26 (2006.01); C23G 5/032 (2006.01); G03F 7/42 (2006.01); C11D 7/08 (2006.01); H01L 21/02 (2006.01); C11D 7/50 (2006.01); C11D 7/24 (2006.01);
U.S. Cl.
CPC ...
C11D 11/0047 (2013.01); C11D 7/08 (2013.01); C11D 7/247 (2013.01); C11D 7/26 (2013.01); C11D 7/3209 (2013.01); C11D 7/3281 (2013.01); C11D 7/5004 (2013.01); C11D 7/5022 (2013.01); C23G 5/032 (2013.01); G03F 7/423 (2013.01); G03F 7/425 (2013.01); H01L 21/02057 (2013.01);
Abstract
The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.