The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 20, 2016
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Tamer Elkhatib, San Jose, CA (US);

Cyrus Soli Bamji, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); H04N 5/3745 (2011.01); H04N 5/33 (2006.01); H04N 5/363 (2011.01); H04N 5/357 (2011.01); H04N 5/347 (2011.01); H01L 27/146 (2006.01); H04N 13/271 (2018.01); G01S 17/36 (2006.01); H04N 5/369 (2011.01); G01S 17/89 (2020.01); G01S 7/4915 (2020.01); G01S 7/481 (2006.01);
U.S. Cl.
CPC ...
H04N 5/37452 (2013.01); G01S 7/4816 (2013.01); G01S 7/4915 (2013.01); G01S 17/36 (2013.01); G01S 17/89 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14641 (2013.01); H04N 5/332 (2013.01); H04N 5/347 (2013.01); H04N 5/3575 (2013.01); H04N 5/363 (2013.01); H04N 5/3696 (2013.01); H04N 5/37457 (2013.01); H04N 13/271 (2018.05);
Abstract

Pixel arrangements in time-of-flight sensors or other imaging sensors are presented that include a sensing element configured to accumulate charges related to incident light, and two transfer gates proximate to the sensing element and configured to selectively control transfer of the charges in the pixel arrangement. During an integration phase, a charge storage element for a global shutter stores first charges received from the sensing element based on activation of a first transfer gate and inactivation of a second transfer gate. During a reset phase, a diffusion node receives second charges received from the sensing element based on inactivation of the first transfer gate and activation of the second transfer gate. During a pixel readout phase, the diffusion node receives the first charges received from the charge storage element based on activation of the first transfer gate and activation of the second transfer gate.


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