The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jan. 15, 2019
Renesas Electronics Corporation, Tokyo, JP;
Yoji Kashihara, Tokyo, JP;
Koichi Takeda, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
To stably operate a negative-voltage level shifter even when a voltage value of a high level of an input signal is lowered, a negative-voltage level shifter in a semiconductor device includes a first level shifter, a second level shifter, and a first medium-voltage generating circuit. The first level shifter converts a high level of an input signal from a positive first power-supply voltage to a first medium voltage. The second level shifter converts a low level of an output signal of the first level shifter from a third power-supply voltage to a negative fourth power-supply voltage that is lower than the third power-supply voltage. The first medium-voltage generating circuit generates the first medium voltage in such a manner that the first medium voltage is higher than the first power-supply voltage and is lower than a second power-supply voltage, and includes a source-follower NMOS transistor and a clamping PMOS transistor.