The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Mar. 14, 2017
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventor:
Kaifeng Zhou, Guangdong, CN;
Assignee:
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/502 (2013.01); H01L 51/5004 (2013.01); H01L 51/5056 (2013.01); H01L 51/5072 (2013.01); H01L 51/5088 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); H01L 51/56 (2013.01); H01L 2251/552 (2013.01);
Abstract
Disclosed are a quantum dots light-emitting diode and a method for manufacturing the same. The quantum dots light-emitting diode includes an anode, which is arranged on a substrate; a first hole injection layer, which is a neutral hole injection layer and arranged on the anode; a second hole injection layer, which is arranged on the first hole injection layer; a quantum dots light-emitting layer, which is arranged on the second hole injection layer; and a cathode, which is arranged on the quantum dots light-emitting layer.