The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jan. 07, 2019
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Global Frontier Center for Multiscale Energy Systems, Seoul, KR;
Hyun Suk Jung, Seoul, KR;
Sang Myeong Lee, Suwon-si, KR;
Byeong Jo Kim, Suwon-si, KR;
Dong Geon Lee, Suwon-si, KR;
Ji Hyun Baek, Suwon-si, KR;
Jae Myeong Lee, Suwon-si, KR;
Min Hee Kim, Suwon-si, KR;
Won Bin Kim, Suwon-si, KR;
So Yeon Park, Cheongju-si, KR;
Miyeon Baek, Seoul, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
GLOBAL FRONTIER CENTER FOR MULTISCALE ENERGY SYSTEMS, Seoul, KR;
Abstract
The present disclosure relates to a resistive random access memory device and a preparing method of the resistive random access memory device, including: a first resistance change layer formed on a first electrode and comprising an organic metal halide having a three-dimensional perovskite crystal structure; a second resistance change layer formed on the first resistance change layer and comprising an organic metal halide having a two-dimensional perovskite crystal structure; and a second electrode formed on the second resistance change layer.