The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Dec. 11, 2017
Applicant:

Alta Devices, Inc., Sunnyvale, CA (US);

Inventors:

Brendan M. Kayes, Los Gatos, CA (US);

Melissa J. Archer, San Jose, CA (US);

Thomas J. Gmitter, Sunnyvale, CA (US);

Gang He, Cupertino, CA (US);

Assignee:

ALTA DEVICES, INC., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01); H01L 31/0216 (2014.01); H01L 31/0352 (2006.01); H01L 33/22 (2010.01); H01L 31/0693 (2012.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); H01L 31/02167 (2013.01); H01L 31/02327 (2013.01); H01L 31/02363 (2013.01); H01L 31/035281 (2013.01); H01L 31/0693 (2013.01); H01L 31/18 (2013.01); H01L 31/184 (2013.01); H01L 31/1852 (2013.01); H01L 33/22 (2013.01); H01L 33/405 (2013.01); Y02E 10/544 (2013.01);
Abstract

An optoelectronic device and a method for fabricating the optoelectronic device are disclosed. The optoelectronic device comprises a p-n structure, a patterned dielectric layer comprising a dielectric material and a metal layer disposed on the dielectric layer. The metal layer makes one or more contact to the p-n structure through the patterned dielectric layer. The dielectric material may be chemically resistant to acids and may provide adhesion to the p-n structure and the metal layer. The method for fabricating an optoelectronic device comprises providing a p-n structure, providing a dielectric layer on the p-n structure and providing a metal layer on the dielectric layer and then lifting the device off the substrate, such that after the lift off the p-n structure is closer than the patterned dielectric layer to a front side of the device; wherein the device comprises the p-n structure, the patterned dielectric layer, and the metal layer.


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