The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Sep. 29, 2015
Applicants:

Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Aledia, Grenoble, FR;

Inventors:

Ivan-Christophe Robin, Grenoble, FR;

Amélie Dussaigne, Bizonnes, FR;

Guy Feuillet, Saint Martin D'uriage, FR;

Stéphanie Gaugiran, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 31/0352 (2006.01); H01L 33/06 (2010.01); H01L 33/18 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 31/035209 (2013.01); H01L 33/06 (2013.01); H01L 33/18 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01);
Abstract

An optoelectronic device including three-dimensional semiconductor elements predominantly made of a first compound selected from among the group consisting of Compounds III-V, Compounds II-VI, and Compounds IV. Each semiconductor element defines, optionally with insulating portions partially covering said semiconductor element, at least one first surface including contiguous facets angled relative to each other. The optoelectronic device includes quantum dots at least some of the seams between the facets. The quantum dots are predominantly made of a mixture of the first compound and an additional element and are suitable for emitting or receiving a first electromagnetic radiation at a first wavelength.


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