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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10615298 B1

PDFFull Text
Date of Patent:
Apr. 07, 2020

Filed:

Feb. 08, 2017

Photoelectric conversion element, method for manufacturing same, and imaging apparatus

Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Shuji Manda, Kanagawa, JP;

Atsushi Okuyama, Kanagawa, JP;

Ryosuke Matsumoto, Tokyo, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Victor A Mandala

Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 27/146 (2006.01); H01L 31/109 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H04N 5/374 (2011.01); H04N 5/378 (2011.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0304 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14623 (2013.01); H01L 27/14645 (2013.01); H01L 27/14649 (2013.01); H01L 27/14689 (2013.01); H01L 27/14694 (2013.01); H01L 31/02164 (2013.01); H01L 31/022408 (2013.01); H01L 31/022466 (2013.01); H01L 31/03046 (2013.01); H01L 31/109 (2013.01); H01L 31/1844 (2013.01); H01L 31/1884 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01); H01L 27/14627 (2013.01); H01L 51/4253 (2013.01);
Abstract

A photoelectric conversion element includes: a first compound semiconductor layermade of a first compound semiconductor material having a first conductivity type; a photoelectric conversion layerformed on the first compound semiconductor layer; a second compound semiconductor layercovering the photoelectric conversion layerand made of a second compound semiconductor material having the first conductivity type; a second conductivity type regionformed at least in a part of the second compound semiconductor layer, having a second conductivity type different from the first conductivity type, and reaching the photoelectric conversion layer; an element isolation layersurrounding a lateral surface of the photoelectric conversion layer; a first electrodeformed on the second conductivity type region; and a second electrodeelectrically connected to the first compound semiconductor layer

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