The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Feb. 22, 2013
International Business Machines Corporation, Armonk, NY (US);
King Abdulaziz City for Science and Technology, Riyadh, SA;
Abdulrahman M. Albadri, Riyadh, SA;
Bahman Hekmatshoartabari, White Plains, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Katherine L. Saenger, Ossining, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY, Riyadh, SA;
Abstract
A method for forming a photovoltaic device includes forming a doped layer on a crystalline substrate, the doped layer having an opposite dopant conductivity as the substrate. A non-crystalline transparent conductive electrode (TCE) layer is formed on the doped layer at a temperature less than 150 degrees Celsius. The TCE layer is flash annealed to crystallize material of the TCE layer at a temperature above about 150 degrees Celsius for less than 10 seconds.