The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Oct. 30, 2018
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Ryo Tanaka, Hino, JP;

Shinya Takashima, Hachioji, JP;

Katsunori Ueno, Matsumoto, JP;

Masaharu Edo, Tokorozawa, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/872 (2006.01); H01L 29/06 (2006.01); H01L 27/08 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 27/0814 (2013.01); H01L 29/0619 (2013.01); H01L 29/0657 (2013.01); H01L 29/0688 (2013.01); H01L 29/0692 (2013.01); H01L 29/66212 (2013.01); H01L 29/0649 (2013.01); H01L 29/2003 (2013.01);
Abstract

A diode is provided, the diode including: a semiconductor layer of a first conductivity type, configured to have a trench structure and be an epitaxial layer of a wide gap semiconductor; a semiconductor layer of a second conductivity type, configured to be at least in contact with a side wall of the trench structure and be an epitaxial layer of the wide gap semiconductor; and an electrode configured to be in contact with the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, on the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type.


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