The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Mar. 27, 2018
Applicant:

Hong Kong Applied Science and Technology Research Institute Co., Ltd., Shatin, HK;

Inventors:

Siu Wai Wong, Junk Bay, HK;

Shu Kin Yau, Junk Bay, HK;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 27/08 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02634 (2013.01); H01L 21/046 (2013.01); H01L 21/0475 (2013.01); H01L 21/0485 (2013.01); H01L 23/3171 (2013.01); H01L 27/0814 (2013.01); H01L 29/0657 (2013.01); H01L 29/1608 (2013.01); H01L 29/417 (2013.01); H01L 29/45 (2013.01); H01L 29/6606 (2013.01);
Abstract

A silicon carbide chip array containing a silicon carbide substrate; a silicon carbide layer on top of the silicon carbide substrate; a first metal contact connected to the silicon carbide substrate; and two second metal contacts connected to the first portion and the second portion respectively. The silicon carbide layer is thinner and having lower doping than the silicon carbide layer. The silicon carbide layer includes a first portion and a second portion which are separate from each other. Each one of the second metal contacts forms a semiconductor device with the first metal contact. At least one of the first and second portions contains a side face which is inclined with respect to the silicon carbide substrate. Such a configuration enhances the breakdown voltage and reduces leakage current of the resultant silicon carbide diode array.


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Wong, Siu. (2020). High voltage silicon carbide schottky diode flip chip array (U.S. Patent No. 10615292). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10615292

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