The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Jul. 19, 2018
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Hsing-Chao Liu, Jhudong Township, TW;
Li-Che Chen, Hsinchu, TW;
Chien-Hsien Song, Kaohsiung, TW;
Shu-Wei Hsu, Hsinchu, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A capacitor structure includes a first electrode plate disposed on a substrate, a first capacitor dielectric layer disposed on the first electrode plate, and a second electrode plate disposed on the first capacitor dielectric layer. A portion of the first electrode plate extends beyond an end of the second electrode plate to form a step. The capacitor structure also includes an etching stop layer, an inter-metal dielectric layer, a first via and a second via. The etching stop layer is disposed on the second electrode plate. The inter-metal dielectric layer covers the etching stop layer, the second electrode plate, the first capacitor dielectric layer and the first electrode plate. The first via penetrates through the inter-metal dielectric layer to contact the first electrode plate at the portion extending beyond the second electrode plate. The second via penetrates through the inter-metal dielectric layer to contact the second electrode plate.