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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10615214 B1

PDFFull Text
Date of Patent:
Apr. 07, 2020

Filed:

Sep. 21, 2018

Semiconductor device, solid-state imaging device with tantalum oxide layer formed by diffusing a material of an electrode of necessity or a counter electrode

Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Takashi Yokoyama, Kumamoto, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:

Dentons US LLP

Primary Examiner:

Herve-Louis Y Assouman

Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/48 (2006.01); H01L 31/0224 (2006.01); H01L 31/028 (2006.01); H01L 31/18 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 23/481 (2013.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14634 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/14689 (2013.01); H01L 31/028 (2013.01); H01L 31/0224 (2013.01); H01L 31/18 (2013.01); B82Y 20/00 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); Y10S 977/742 (2013.01); Y10S 977/954 (2013.01);
Abstract

A semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes.

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