The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Dec. 09, 2016
Applicant:
AU Optronics Corporation, Hsin-Chu, TW;
Inventors:
Chan-Jui Liu, Hsin-Chu, TW;
Yu-Ling Lin, Hsin-Chu, TW;
Chien-Hsun Shan, Hsin-Chu, TW;
Jia-Hua Lin, Hsin-Chu, TW;
Assignee:
AU OPTRONICS CORPORATION, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1255 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); H01L 29/41733 (2013.01); H01L 29/66757 (2013.01); H01L 29/78618 (2013.01); H01L 29/78621 (2013.01); H01L 29/78675 (2013.01);
Abstract
The present invention provides an array substrate and a manufacturing method thereof. Etching stop patterns or auxiliary conductive patterns of a patterned auxiliary conductive layer are disposed corresponding to heavily doped regions of a patterned semiconductor layer, and source/drain electrodes may be electrically connected to the heavily doped regions via the etching stop patterns or the auxiliary conductive patterns. The production yield and the uniformity of electrical properties may be enhanced accordingly.