The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10615132 B1

Date of Patent:

Apr. 07, 2020

Filed:

Mar. 15, 2018

Integrated circuit capable of operating at very high voltage and method of fabricating same

Applicants:

Alain Comeau, Escondido, CA (US);

Stephen Swift, San Diego, CA (US);

Inventors:

Alain Comeau, Escondido, CA (US);

Stephen Swift, San Diego, CA (US);

Assignee:

Other;

Attorney:

Primary Examiner:

Lincoln D Donovan

Assistant Examiner:

Dave Mattison

Int. Cl.

CPC ...

H01L 23/64 (2006.01); H01L 49/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 21/762 (2006.01);

U.S. Cl.

CPC ...

H01L 23/647 (2013.01); H01L 21/76264 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 28/20 (2013.01); H01L 21/76275 (2013.01); H01L 21/76283 (2013.01);

Abstract

An integrated circuit (IC) fabricated on a Silicon-On-Insulator (SOI) wafer, having a plurality of impedance elements cascoded in series, each impedance elements having a specified value. A subset of the impedance elements are arranged to bias a first tub at a specified very high voltage (VHV) multiplied by a first predetermined ratio. A further subset of the impedance elements are arranged to bias a second tub at VHV multiplied by a second predetermined ratio and each of the impedance elements are further arranged to bias a handle and a third surrounding tub at VHV multiplied by a third predetermined ratio. A method for designing an integrated circuit using fully dielectrically isolated processes which function reliably at higher operating voltages than that provided by the conventional processes.

Find Patent Forward Citations

Comeau, Alain. (2020). Integrated circuit capable of operating at very high voltage and method of fabricating same (U.S. Patent No. 10615132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10615132

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