The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Feb. 26, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Dong-hyun Lee, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/525 (2006.01); G11C 17/16 (2006.01); H01L 27/112 (2006.01); G11C 17/18 (2006.01); H01L 27/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5252 (2013.01); G11C 17/16 (2013.01); G11C 17/18 (2013.01); H01L 23/525 (2013.01); H01L 27/101 (2013.01); H01L 27/11206 (2013.01); H01L 29/423 (2013.01); H01L 29/42368 (2013.01);
Abstract
An anti-fuse device includes a program transistor and a read transistor. The program transistor executes a program via insulation breakdown of a gate insulating layer. The read transistor is adjacent to the program transistor and reads the state of the program transistor. At least one of a first gate electrode of the program transistor or a second gate electrode of the read transistor is buried in a substrate.