The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Nov. 20, 2016
Applicant:
Semikron Elektronik Gmbh & Co., KG, Nürnberg, DE;
Inventors:
Assignee:
Semikron Elektronik GmbH & Co., KG, Nürnberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/50 (2006.01); H01L 23/36 (2006.01); H01L 23/538 (2006.01); H02M 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49575 (2013.01); H01L 23/36 (2013.01); H01L 23/3735 (2013.01); H01L 23/50 (2013.01); H01L 23/5386 (2013.01); H01L 24/06 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H02M 7/003 (2013.01); H01L 2224/05552 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/4846 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49113 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1427 (2013.01); H01L 2924/19107 (2013.01);
Abstract
A power electronic switching device having plurality of potential surfaces. At least two different potentials are respectively assigned to at least one of the potential surfaces. A plurality of semiconductor components are arranged in an n×m matrix, oriented in the x-y-direction, on a first conductor track, formed by at least one potential surface of the first potential. The semiconductor components are connected in parallel with one another and form a current valve. In this case, the semiconductor components can be distributed among a plurality of potential surfaces of the first potential which form the first conductor track.