The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2020

Filed:

Oct. 29, 2018
Applicant:

SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;

Inventors:

Jung Kil Park, Gumi-si, KR;

Sung Woo Jung, Gumi-si, KR;

Ja Young Kim, Gumi-si, KR;

Assignee:

SK Siltron Co., Ltd., Gumi-si, Gyeongsangbuk-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/67 (2006.01); G01B 21/08 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01B 21/08 (2013.01); H01L 21/67103 (2013.01); H01L 22/20 (2013.01); G01B 21/085 (2013.01);
Abstract

An embodiment provides a method of predicting a thickness of an oxide layer of a silicon wafer including: aging a heat treatment furnace (furnace); measuring a thickness of each of the oxide layers after disposing a plurality of reference wafers in slots of a heat treatment boat in the furnace and forming oxide layers; and measuring a thickness of each of the oxide layers after disposing the plurality of reference wafers and test wafers in the slots of the heat treatment boat in the furnace and forming oxide layers.


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