The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2020
Filed:
Dec. 28, 2018
Nuvoton Technology Corporation, Hsinchu, TW;
NUVOTON TECHNOLOGY CORPORATION, Hsinchu Science Park, TW;
Abstract
Semiconductor devices and methods of fabricating the same are provided. The semiconductor device includes a substrate having a first conductive type. A second conductive type first epitaxial layer is disposed over the substrate. A second conductive type second epitaxial layer is disposed over the second conductive type first epitaxial layer. An active region of the substrate includes a first conductive type buried layer in the second conductive type first and second epitaxial layers. A first conductive type doped well region is disposed in the second conductive type second epitaxial layer. A second conductive type heavily doped region is disposed over the first conductive type doped well region. A first trench isolation feature is disposed in the substrate. In addition, a first conductive type doped region is disposed between a bottom surface of the first trench isolation feature and the first conductive type buried layer.